Invention Grant
US09240342B2 Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
有权
通过进行置换生长工艺来形成FinFET半导体器件的替换翅片的方法
- Patent Title: Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
- Patent Title (中): 通过进行置换生长工艺来形成FinFET半导体器件的替换翅片的方法
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Application No.: US13944200Application Date: 2013-07-17
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Publication No.: US09240342B2Publication Date: 2016-01-19
- Inventor: Ajey P. Jacob , Murat K. Akarvardar , Jody Fronheiser , Witold P. Maszara
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/66 ; H01L29/78 ; H01L27/12
Abstract:
Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a stable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density of 104 defects/cm2 or less throughout its entire height. In another case, a metastable replacement fin is grown to a height that is greater than an unconfined metastable critical thickness of the replacement fin material and it has a defect density of 105 defects/cm2 or less throughout at least 90% of its entire height.
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