Invention Grant
- Patent Title: Scheme to reduce stress of input/ output (IO) driver
- Patent Title (中): 减少输入/输出(IO)驱动程序的压力的方案
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Application No.: US14043583Application Date: 2013-10-01
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Publication No.: US09240400B2Publication Date: 2016-01-19
- Inventor: Venkateswara Reddy P , Vinayak Ghatawade , Rajat Chauhan
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frank D. Cimino
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H3/00 ; H01L27/02

Abstract:
An input/output (IO) circuit is provided that reduces stress on a driver without using an additional reference voltage. The IO circuit receives an overshoot voltage and an undershoot voltage in a receive mode. The IO circuit includes a driver circuit. The driver circuit includes an NMOS transistor coupled to a PMOS transistor. A pad is coupled to the driver circuit. A PMOS protect circuit is coupled to the driver circuit and the pad. An NMOS protect circuit is coupled to the driver circuit and the pad. The NMOS protect circuit is configured to be activated only for a duration of the overshoot voltage received at the pad during the receive mode and the PMOS protect circuit is configured to be activated only for a duration of the undershoot voltage received at the pad during the receive mode.
Public/Granted literature
- US20150092308A1 SCHEME TO REDUCE STRESS OF INPUT/ OUTPUT (IO) DRIVER Public/Granted day:2015-04-02
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