Invention Grant
US09240408B2 Integrated circuit device with transistors having different threshold voltages
有权
具有不同阈值电压的晶体管的集成电路器件
- Patent Title: Integrated circuit device with transistors having different threshold voltages
- Patent Title (中): 具有不同阈值电压的晶体管的集成电路器件
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Application No.: US13838172Application Date: 2013-03-15
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Publication No.: US09240408B2Publication Date: 2016-01-19
- Inventor: Seung-Hyun Song , Seung-Chul Lee , In-Kook Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0062232 20120611
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L27/11 ; H01L27/088 ; H01L21/8234
Abstract:
Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor.
Public/Granted literature
- US20130328133A1 INTEGRATED CIRCUIT DEVICE WITH TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES Public/Granted day:2013-12-12
Information query
IPC分类:
