Invention Grant
- Patent Title: Semiconductor structure and device and methods of forming same using selective epitaxial process
- Patent Title (中): 使用选择性外延工艺的半导体结构及其形成方法
-
Application No.: US14040196Application Date: 2013-09-27
-
Publication No.: US09240412B2Publication Date: 2016-01-19
- Inventor: Qi Xie , Vladimir Machkaoutsan , Jan Willem Maes
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/092 ; H01L21/8238
Abstract:
Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both re-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.
Public/Granted literature
- US20150091057A1 SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USING SELECTIVE EPITAXIAL PROCESS Public/Granted day:2015-04-02
Information query
IPC分类:
