Invention Grant
- Patent Title: Method for fabricating capacitor of semiconductor device
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Application No.: US13610588Application Date: 2012-09-11
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Publication No.: US09240442B2Publication Date: 2016-01-19
- Inventor: Sung-Won Lim , Seung-Jin Yeom , Hyo-Seok Lee
- Applicant: Sung-Won Lim , Seung-Jin Yeom , Hyo-Seok Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0071152 20120629
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L49/02 ; H01L27/108
Abstract:
A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings.
Public/Granted literature
- US20140004678A1 METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
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