Invention Grant
- Patent Title: IGBT transistor with protection against parasitic component activation and manufacturing process thereof
- Patent Title (中): 具有防止寄生元件激活的IGBT晶体管及其制造工艺
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Application No.: US14162200Application Date: 2014-01-23
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Publication No.: US09240457B2Publication Date: 2016-01-19
- Inventor: Davide Giuseppe Patti , Giuditta Settanni
- Applicant: STMicroelectronics S.r.I.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/66 ; H01L29/10 ; H01L29/739
Abstract:
An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a direction perpendicular to a surface of the drift region and has the first type of conductivity and a lower resistance than the body region. The conduction region includes a plurality of implant regions, arranged at respective depths from the surface of the drift region.
Public/Granted literature
- US20140134807A1 IGBT TRANSISTOR WITH PROTECTION AGAINST PARASITIC COMPONENT ACTIVATION AND MANUFACTURING PROCESS THEREOF Public/Granted day:2014-05-15
Information query
IPC分类:
