Invention Grant
US09240458B2 Methods of fabricating nonvolatile memory devices and related devices
有权
制造非易失性存储器件和相关器件的方法
- Patent Title: Methods of fabricating nonvolatile memory devices and related devices
- Patent Title (中): 制造非易失性存储器件和相关器件的方法
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Application No.: US13742554Application Date: 2013-01-16
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Publication No.: US09240458B2Publication Date: 2016-01-19
- Inventor: Hyun-Seok Na , Ji-Hwon Lee , Joong-Shik Shin , Chang-Sun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0005324 20120117
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L29/66 ; H01L21/28 ; H01L21/762 ; H01L27/115
Abstract:
Provided is a fabricating method of a nonvolatile memory. The fabricating method includes forming a plurality of gates extending in a first direction on a substrate to be adjacent to each other, forming a gap-fill layer filling at least a portion of a space between the plurality of gates, forming a supporter pattern supporting the plurality of gates on the plurality of gates and the gap-fill layer, and forming an air gap in the space between the plurality of gates by removing the gap-fill layer.
Public/Granted literature
- US20130183818A1 Methods of Fabricating Nonvolatile Memory Devices and Related Devices Public/Granted day:2013-07-18
Information query
IPC分类:
