Invention Grant
- Patent Title: Bipolar transistor having laterally extending collector
- Patent Title (中): 具有横向延伸的收集器的双极晶体管
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Application No.: US14223296Application Date: 2014-03-24
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Publication No.: US09240468B2Publication Date: 2016-01-19
- Inventor: Tony Vanhoucke , Viet Thanh Dinh , Anco Heringa , Dirk Klaassen , Evelyne Gridelet , Jan Willem Slotboom
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP13160864 20130325
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/737 ; H01L29/40 ; H01L29/66 ; H01L29/732 ; H01L29/08 ; H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/205
Abstract:
A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.
Public/Granted literature
- US20140312356A1 Semiconductor Device Public/Granted day:2014-10-23
Information query
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