发明授权
- 专利标题： Image sensors having transfer gate electrodes in trench
- 专利标题（中）： 图像传感器在沟槽中具有传输栅电极
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申请号： US14330378申请日： 2014-07-14
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公开(公告)号： US09240512B2公开(公告)日： 2016-01-19
- 发明人: Sungchul Kim , Hyoungsoo Ko , Wonjoo Kim , Jung Bin Yun , Kwang-Min Lee
- 申请人： Sungchul Kim , Hyoungsoo Ko , Wonjoo Kim , Jung Bin Yun , Kwang-Min Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2013-0131345 20131031
- 主分类号： H01L31/16
- IPC分类号： H01L31/16 ; H01L27/146
摘要：
Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.
公开/授权文献
- US20150115291A1 Image Sensors Having Transfer Gate Electrodes in Trench 公开/授权日：2015-04-30
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