Invention Grant
US09242852B2 Wafer-level passivation structure of micro-device, micro-device including the same, and methods of manufacturing wafer-level passivation structure and micro-device 有权
微器件的晶圆级钝化结构,包括微晶元件的晶体级钝化结构以及晶圆级钝化结构和微器件的制造方法

Wafer-level passivation structure of micro-device, micro-device including the same, and methods of manufacturing wafer-level passivation structure and micro-device
Abstract:
A wafer-level passivation structure of a micro-device, a micro-device including the same, and methods of manufacturing the wafer-level passivation structure and the micro-device may be provided. In particular, the passivation structure may include a spacer that is disposed on a substrate, covers a portion of the first surface, and has an elastic property, and an anti-adhesion layer that is disposed on a surface of the substrate between the spacer. The spacer may form a lattice pattern. The spacer may be formed of a silicon. The anti-adhesion layer may be a metallic film, an oxide film, or a nitride film.
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