Invention Grant
- Patent Title: XMR-sensor and method for manufacturing the XMR-sensor
- Patent Title (中): XMR传感器和制造XMR传感器的方法
-
Application No.: US13741693Application Date: 2013-01-15
-
Publication No.: US09244134B2Publication Date: 2016-01-26
- Inventor: Juergen Zimmer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/09 ; H05K3/30 ; G01R33/00

Abstract:
An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
Public/Granted literature
- US20140197827A1 XMR-Sensor and Method for Manufacturing the XMR-Sensor Public/Granted day:2014-07-17
Information query