A system and device are provided for implementing memory arrays using high-density latch cells. The device includes an array of cells arranged into columns and rows. Each cell comprises a latch cell that includes a transmission gate, a pair of inverters, and an output buffer. Each row of latch cells is connected to at least one common node for addressing the row of latch cells, and each column of latch cells is connected to a particular bit of an input signal and a particular bit of an output signal. A register file may be implemented using one or more arrays of the high-density latch cells to replace any or all of the banks of SRAM cells typically used to implement the register file.