Invention Grant
- Patent Title: Clock synchronization circuit and semiconductor memory device including clock synchronization circuit
- Patent Title (中): 时钟同步电路和包括时钟同步电路的半导体存储器件
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Application No.: US14250460Application Date: 2014-04-11
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Publication No.: US09245605B2Publication Date: 2016-01-26
- Inventor: Seong-Hwan Jeon , Yang-Ki Kim , Seok-Hun Hyun , Jung-Hwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeongg-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeongg-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0111935 20130917
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C7/22 ; H03L7/081 ; H03L7/095 ; H03L7/10

Abstract:
A clock synchronization circuit includes a delay-locked loop (DLL) and a delay-locked control unit. The DLL is configured to generate an output clock signal by delaying an input clock signal by a delay time, and to execute a delay-locking operation in which the delay time is adjusted to a locked state according to a comparison between the output clock signal and the input clock signal. The delay-locked control unit configured to detect the locked state of the DLL, and to control the DLL based on the determined locked state.
Public/Granted literature
- US20140313847A1 CLOCK SYNCHRONIZATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING CLOCK SYNCHRONIZATION CIRCUIT Public/Granted day:2014-10-23
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