Invention Grant
- Patent Title: Deep collector vertical bipolar transistor with enhanced gain
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Application No.: US14575552Application Date: 2014-12-18
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Publication No.: US09245755B2Publication Date: 2016-01-26
- Inventor: Brian E. Hornung , Xiang-Zheng Bo , Amitava Chatterjee , Alwin J. Tsao
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L21/265 ; H01L29/732 ; H01L29/66 ; H01L29/08 ; H01L21/8249 ; H01L27/06 ; H01L29/10 ; H01L29/78
Abstract:
An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.
Public/Granted literature
- US20150187760A1 DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN Public/Granted day:2015-07-02
Information query
IPC分类:
