Invention Grant
US09245979B2 FinFET semiconductor devices with local isolation features and methods for fabricating the same
有权
具有局部隔离特性的FinFET半导体器件及其制造方法
- Patent Title: FinFET semiconductor devices with local isolation features and methods for fabricating the same
- Patent Title (中): 具有局部隔离特性的FinFET半导体器件及其制造方法
-
Application No.: US13902369Application Date: 2013-05-24
-
Publication No.: US09245979B2Publication Date: 2016-01-26
- Inventor: Xiuyu Cai , Ruilong Xie , Songkram Srivathanakul
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66

Abstract:
FinFET semiconductor devices with local isolation features and methods for fabricating such devices are provided. In one embodiment, a method for fabricating a semiconductor device includes providing a semiconductor substrate comprising a plurality of fin structures formed thereon, wherein each of the plurality of fin structures has sidewalls, forming spacers about the sidewalls of the plurality of fin structures, and forming a silicon-containing layer over the semiconductor substrate and in between the plurality of fin structures. The method further includes removing at least a first portion of the silicon-containing layer to form a plurality of void regions while leaving at least a second portion thereof in place and depositing an isolation material in the plurality of void regions.
Public/Granted literature
- US20140346599A1 FINFET SEMICONDUCTOR DEVICES WITH LOCAL ISOLATION FEATURES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2014-11-27
Information query
IPC分类: