Invention Grant
US09246013B2 IGZO devices with composite channel layers and methods for forming the same
有权
具有复合沟道层的IGZO器件及其形成方法
- Patent Title: IGZO devices with composite channel layers and methods for forming the same
- Patent Title (中): 具有复合沟道层的IGZO器件及其形成方法
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Application No.: US14133521Application Date: 2013-12-18
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Publication No.: US09246013B2Publication Date: 2016-01-26
- Inventor: Khaled Ahmed
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786 ; H01L29/66 ; H01L21/02
Abstract:
Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. An IGZO channel layer is formed above the gate electrode. The IGZO channel layer has a first sub-layer including c-IGZO and a second sub-layer including a-IGZO. A source electrode and a drain electrode are formed above the IGZO channel layer.
Public/Granted literature
- US20150171227A1 IGZO Devices with Composite Channel Layers and Methods for Forming the Same Public/Granted day:2015-06-18
Information query
IPC分类:
