发明授权
- 专利标题： Contact for silicon heterojunction solar cells
- 专利标题（中）： 硅异质结太阳能电池的接触
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申请号： US13604198申请日： 2012-09-05
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公开(公告)号： US09246033B2公开(公告)日： 2016-01-26
- 发明人: Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/028
- IPC分类号： H01L31/028 ; H01L31/0352 ; H01L31/0747 ; B82Y20/00
摘要：
A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
公开/授权文献
- US20120325304A1 CONTACT FOR SILICON HETEROJUNCTION SOLAR CELLS 公开/授权日：2012-12-27