- 专利标题: Etching processes for solar cell fabrication
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申请号: US14498850申请日: 2014-09-26
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公开(公告)号: US09246046B1公开(公告)日: 2016-01-26
- 发明人: Scott Harrington , Venkatasubramani Balu , Staffan Westerberg , Peter John Cousins
- 申请人: Scott Harrington , Venkatasubramani Balu , Staffan Westerberg , Peter John Cousins
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Blakely Sokoloff Taylor Zafman LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L31/20 ; H01L31/18 ; H01L31/068 ; H01L31/0288 ; H01L31/0352
摘要:
A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.
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