Invention Grant
- Patent Title: Method of forming magnetic memory devices
- Patent Title (中): 形成磁存储器件的方法
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Application No.: US14286407Application Date: 2014-05-23
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Publication No.: US09246082B2Publication Date: 2016-01-26
- Inventor: Ken Tokashiki
- Applicant: Ken Tokashiki
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2013-0094925 20130809
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L21/02 ; H01L27/22
Abstract:
Provided is a method of forming a magnetic memory device. A first magnetic layer, a tunnel barrier, and a second magnetic layer are deposited on a substrate. The second magnetic layer, the tunnel barrier, and the first magnetic layer are etched to form magnetic tunnel junction structures. An ion beam etching process is performed using an oxygen-containing source gas to remove etching by-products on sidewalls of the magnetic tunnel junction structure and to oxidize the sidewalls of the magnetic tunnel junction structures.
Public/Granted literature
- US20150044781A1 METHOD OF FORMING MAGNETIC MEMORY DEVICES Public/Granted day:2015-02-12
Information query
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