发明授权
- 专利标题: System and method for providing voltage supply protection in a memory device
- 专利标题(中): 在存储器件中提供电压保护的系统和方法
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申请号: US13605129申请日: 2012-09-06
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公开(公告)号: US09251864B2公开(公告)日: 2016-02-02
- 发明人: Jan Otterstedt , Wolf Allers , Mihail Jefremow , Edvin Paparisto , Leonardo Castro , Thomas Kern
- 申请人: Jan Otterstedt , Wolf Allers , Mihail Jefremow , Edvin Paparisto , Leonardo Castro , Thomas Kern
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: G11C29/04
- IPC分类号: G11C29/04 ; G11C29/02 ; G11C5/14
摘要:
The invention relates to an electronic memory system, and more specifically, to a system for providing voltage supply protection in a memory device, and a method for providing voltage supply protection in a memory device. According to an embodiment, a system for providing voltage supply protection in a memory device is provided, the system including a memory array including a plurality of memory cells arranged in a plurality of groups of memory cells, and a plurality of current limiting elements, wherein each group of memory cells is associated with at least one current limiting element.
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