Invention Grant
- Patent Title: FinFET semiconductor device having local buried oxide
- Patent Title (中): 具有局部掩埋氧化物的FinFET半导体器件
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Application No.: US14083164Application Date: 2013-11-18
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Publication No.: US09252272B2Publication Date: 2016-02-02
- Inventor: Yanxiang Liu , Min-hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Nicholas Mesiti, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/66
Abstract:
There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed a local buried oxide region aligned to the gate. In one embodiment, the local buried oxide region is formed below a channel area of the fin.
Public/Granted literature
- US20150137235A1 FINFET SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE Public/Granted day:2015-05-21
Information query
IPC分类:
