发明授权
- 专利标题： FinFET semiconductor device having local buried oxide
- 专利标题（中）： 具有局部掩埋氧化物的FinFET半导体器件
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申请号： US14083164申请日： 2013-11-18
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公开(公告)号： US09252272B2公开(公告)日： 2016-02-02
- 发明人: Yanxiang Liu , Min-hwa Chi
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Heslin Rothenberg Farley & Mesiti P.C.
- 代理商 Nicholas Mesiti, Esq.
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/78 ; H01L29/66
摘要：
There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed a local buried oxide region aligned to the gate. In one embodiment, the local buried oxide region is formed below a channel area of the fin.
公开/授权文献
- US20150137235A1 FINFET SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE 公开/授权日：2015-05-21
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