A method for writing to a memory cell of a memory is disclosed. The method includes generating a write voltage, generating a write current that flows from one of a bit line and a source line of the memory, generating a mirror current that mirrors the write current, generating a compliance current, generating a write detect voltage based on the mirror current and the compliance current, detecting the write detect voltage, when it is detected that the write detect voltage is less or greater than a threshold value, permitting application of the write voltage to the memory cell of the memory, and when it is detected that the write detect voltage increases or decreases to the threshold value, inhibiting the application of the write voltage to the memory cell of the memory. A device that performs the method is also disclosed.