Invention Grant
- Patent Title: Electron beam irradiation method and scanning electronic microscope
- Patent Title (中): 电子束照射法和扫描电子显微镜
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Application No.: US13807577Application Date: 2011-06-08
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Publication No.: US09257259B2Publication Date: 2016-02-09
- Inventor: Kinya Kobayashi , Toshiyuki Yokosuka , Chahn Lee
- Applicant: Kinya Kobayashi , Toshiyuki Yokosuka , Chahn Lee
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-148463 20100630
- International Application: PCT/JP2011/003214 WO 20110608
- International Announcement: WO2012/001883 WO 20120105
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/147 ; H01J37/244

Abstract:
Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position (1) and a second position (2) having the center (104) of a pattern formed on the sample as a symmetrical point, and is then additionally irradiated to two central positions (3, 4) between the first and second irradiation position, the two central positions (3, 4) being on the same radius centered on the symmetrical point as are the first and second positions. Further, after that, the irradiation of the first electron beam to the central positions between existing scanning positions on the radius is repeated.
Public/Granted literature
- US20130187045A1 ELECTRON BEAM IRRADIATION METHOD AND SCANNING ELECTRONIC MICROSCOPE Public/Granted day:2013-07-25
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