发明授权
US09257273B2 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
有权
带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
- 专利标题： Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
- 专利标题（中）： 带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
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申请号： US13876274申请日： 2011-09-22
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公开(公告)号： US09257273B2公开(公告)日： 2016-02-09
- 发明人: Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
- 申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
- 申请人地址： JP JP JP
- 专利权人： HITACHI HIGH-TECH SCIENCE CORPORATION,JAPAN SCIENCE AND TECHNOLOGY AGENCY,JSR CORPORATION
- 当前专利权人： HITACHI HIGH-TECH SCIENCE CORPORATION,JAPAN SCIENCE AND TECHNOLOGY AGENCY,JSR CORPORATION
- 当前专利权人地址： JP JP JP
- 代理机构： Adams & Wilks
- 优先权： JP2010-217084 20100928
- 国际申请： PCT/JP2011/071578 WO 20110922
- 国际公布： WO2012/043363 WO 20120405
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/02 ; H01J37/317 ; C23C16/04 ; C23C16/24 ; C23C16/32 ; C23C16/40 ; C23C16/42 ; C23C16/48 ; C23C16/56 ; H01L21/66 ; H01L21/28 ; H01L29/66
摘要：
A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
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