Invention Grant
- Patent Title: Device having reduced bias temperature instability (BTI)
- Patent Title (中): 降低偏置温度不稳定性（BTI）的器件
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Application No.: US13567791Application Date: 2012-08-06
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Publication No.: US09257283B2Publication Date: 2016-02-09
- Inventor: Joseph Darryl Michael , Stephen Daley Arthur , Tammy Lynn Johnson , David Alan Lilienfeld
- Applicant: Joseph Darryl Michael , Stephen Daley Arthur , Tammy Lynn Johnson , David Alan Lilienfeld
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent John P. Darling
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/00 ; H01L21/04 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide.
Public/Granted literature
- US20140034963A1 DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI) Public/Granted day:2014-02-06
Information query
IPC分类:
