Invention Grant
- Patent Title: Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system
- Patent Title (中): 用于监测非晶硅薄膜结晶的方法和系统，以及使用该方法和系统制造薄膜晶体管的方法
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Application No.: US14022126Application Date: 2013-09-09
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Publication No.: US09257288B2Publication Date: 2016-02-09
- Inventor: Maidanchuk Ivan , Byung-Soo So , Dong-Hyun Lee , Won-Pil Lee
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2013-0049603 20130502
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/268 ; H01L21/00 ; H01L21/02
Abstract:
A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.
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