Invention Grant
US09257342B2 Methods of singulating substrates to form semiconductor devices using dummy material
有权
使用虚拟材料分离衬底以形成半导体器件的方法
- Patent Title: Methods of singulating substrates to form semiconductor devices using dummy material
- Patent Title (中): 使用虚拟材料分离衬底以形成半导体器件的方法
-
Application No.: US14260903Application Date: 2014-04-24
-
Publication No.: US09257342B2Publication Date: 2016-02-09
- Inventor: Gudrun Stranzl , Martin Zgaga , Markus Kahn , Guenter Denifl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/78 ; H01L21/8258 ; H01L21/308
Abstract:
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Public/Granted literature
- US20140235035A1 Methods of Forming Semiconductor Devices Public/Granted day:2014-08-21
Information query
IPC分类:
