Invention Grant
- Patent Title: Stack packages including diffusion barriers over sidewalls of through via electrodes and methods of manufacturing the same
- Patent Title (中): 堆叠包装件包括通孔通孔电极侧壁上的扩散阻挡层及其制造方法
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Application No.: US14189876Application Date: 2014-02-25
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Publication No.: US09257413B2Publication Date: 2016-02-09
- Inventor: Seung Taek Yang , Jong Hoon Kim , Tac Keun Oh , Song Na
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0103078 20130829
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
Embodiments of a stack package may include an upper chip on a lower chip, a backside passivation layer covering the backside surface of the lower chip and having a thickness which is substantially equal to a height of the protrusion portion of a lower through via electrode, a backside bump substantially contacting the protrusion portion, and a front side bump electrically connected to a chip contact portion of the upper chip and physically and electrically connected to the backside bump. The backside passivation layer may include a first insulation layer provided over a sidewall of the protrusion portion and the backside surface of the lower chip. Embodiments of fabrication methods are also disclosed.
Public/Granted literature
- US20150061120A1 STACK PACKAGES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-03-05
Information query
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