Invention Grant
US09257413B2 Stack packages including diffusion barriers over sidewalls of through via electrodes and methods of manufacturing the same 有权
堆叠包装件包括通孔通孔电极侧壁上的扩散阻挡层及其制造方法

Stack packages including diffusion barriers over sidewalls of through via electrodes and methods of manufacturing the same
Abstract:
Embodiments of a stack package may include an upper chip on a lower chip, a backside passivation layer covering the backside surface of the lower chip and having a thickness which is substantially equal to a height of the protrusion portion of a lower through via electrode, a backside bump substantially contacting the protrusion portion, and a front side bump electrically connected to a chip contact portion of the upper chip and physically and electrically connected to the backside bump. The backside passivation layer may include a first insulation layer provided over a sidewall of the protrusion portion and the backside surface of the lower chip. Embodiments of fabrication methods are also disclosed.
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