Method of semiconductor device including step of cutting substrate at opening of insulating layer

Invention Grant

US09257560B2 Method of semiconductor device including step of cutting substrate at opening of insulating layer 有权

Title translation: 包括在绝缘层开口处切割衬底的步骤的半导体器件的方法

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Patent Title: Method of semiconductor device including step of cutting substrate at opening of insulating layer
Patent Title (中): 包括在绝缘层开口处切割衬底的步骤的半导体器件的方法
Application No.: US14246407

Application Date: 2014-04-07
Publication No.: US09257560B2

Publication Date: 2016-02-09
Inventor: Hiroki Adachi , Kayo Kumakura
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Applicant Address: JP Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Kanagawa-ken
Agency: Robinson Intellectual Property Law Office
Agent Eric J. Robinson
Priority: JP2013-081897 20130410
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L27/12 ; H01L29/786

Method of semiconductor device including step of cutting substrate at opening of insulating layer

Abstract:

Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

Abstract(Chinese):

提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。

Public/Granted literature

US20140306288A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体