Invention Grant
- Patent Title: Semiconductor integrated circuit and method for operating the same
- Patent Title (中): 半导体集成电路及其操作方法
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Application No.: US14064522Application Date: 2013-10-28
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Publication No.: US09257907B2Publication Date: 2016-02-09
- Inventor: Takahiro Nomiyama , Koji Tateno , Daisuke Kondo
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2012-282341 20121226
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H03K17/12 ; H03K17/16 ; H02M1/00

Abstract:
A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Q11 and Q12, a low-side switch element Q2, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Q11 and Q12 coupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Q12 from an on-state to an off-state by delaying Q12 relative to Q11. Q11 and Q12 are divided into a plurality of parts inside a semiconductor chip Chip 1, a plurality of partial first transistors formed by dividing Q11 and a plurality of partial second transistors formed by dividing Q12 are alternately arranged in an arrangement direction of Q11 and Q12, inside the semiconductor chip Chip 1.
Public/Granted literature
- US20140176093A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR OPERATING THE SAME Public/Granted day:2014-06-26
Information query
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