Invention Grant
- Patent Title: Integration of pressure or inertial sensors into integrated circuit fabrication and packaging
- Patent Title (中): 将压力或惯性传感器集成到集成电路制造和封装中
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Application No.: US14141875Application Date: 2013-12-27
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Publication No.: US09260294B2Publication Date: 2016-02-16
- Inventor: Kyu Oh Lee , Sasha N. Oster , Feras Eid , Sarah Haney
- Applicant: Kyu Oh Lee , Sasha N. Oster , Feras Eid , Sarah Haney
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.
Public/Granted literature
- US20150183635A1 INTEGRATION OF PRESSURE OR INERTIAL SENSORS INTO INTEGRATED CIRCUIT FABRICATION AND PACKAGING Public/Granted day:2015-07-02
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