Invention Grant
- Patent Title: Memory systems including an input/output buffer circuit
- Patent Title (中): 存储器系统包括一个输入/输出缓冲电路
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Application No.: US14143154Application Date: 2013-12-30
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Publication No.: US09263105B2Publication Date: 2016-02-16
- Inventor: Youngjin Jeon , Jeongdon Ihm , Kilsoo Kim , Jinman Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2013-0000626 20130103
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C7/04

Abstract:
Memory systems are provided. A memory system may include a plurality of nonvolatile memories and a memory controller configured to control the plurality of nonvolatile memories. Moreover, the memory system may include an input/output buffer circuit connected between the memory controller and the plurality of nonvolatile memories. A data channel may be connected between the memory controller and the input/output buffer circuit, and first and second internal data channels may be connected between the input/output buffer circuit and respective first and second groups of the plurality of nonvolatile memories. The input/output buffer circuit may be configured to connect the data channel to one of the first and second internal data channels.
Public/Granted literature
- US20140185389A1 MEMORY SYSTEMS INCLUDING AN INPUT/OUTPUT BUFFER CIRCUIT Public/Granted day:2014-07-03
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