Invention Grant
- Patent Title: Non-volatile memory which can increase the operation window
- Patent Title (中): 非易失性存储器可以增加操作窗口
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Application No.: US14215091Application Date: 2014-03-17
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Publication No.: US09263134B2Publication Date: 2016-02-16
- Inventor: Ya-Nan Mou , Hsin-Pang Lu , Hsi-Wen Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C8/08 ; G11C8/10 ; G11C8/14

Abstract:
A non-volatile memory cell includes a plurality of rows of memory cells, a plurality of bit lines coupled to the plurality of rows of memory cells for accessing data to the plurality of rows of memory cells, a plurality of word lines each coupled to a corresponding row of memory cells, and a decoder coupled to the plurality of word lines for enabling at least one row of memory cells of the plurality of rows of memory cells.
Public/Granted literature
- US20150262621A1 Non-Volatile Memory Which Can Increase the Operation Window Public/Granted day:2015-09-17
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