Invention Grant
- Patent Title: Method for separating epitaxial layers from growth substrates, and semiconductor device using same
- Patent Title (中): 从生长衬底分离外延层的方法和使用其的半导体器件
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Application No.: US14386775Application Date: 2013-03-19
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Publication No.: US09263255B2Publication Date: 2016-02-16
- Inventor: Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-Si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2012-0027561 20120319; KR10-2012-0034341 20120403; KR10-2012-0077658 20120717
- International Application: PCT/KR2013/002227 WO 20130319
- International Announcement: WO2013/141561 WO 20130926
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L33/20 ; H01L29/06 ; H01L33/22 ; H01L33/02
Abstract:
The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Public/Granted literature
- US20150069418A1 METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME Public/Granted day:2015-03-12
Information query
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