Invention Grant
- Patent Title: Method of forming fin-shaped structure
- Patent Title (中): 形成翅片结构的方法
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Application No.: US13902970Application Date: 2013-05-27
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Publication No.: US09263287B2Publication Date: 2016-02-16
- Inventor: Po-Chao Tsao , Chien-Ting Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/308 ; H01L29/66
Abstract:
A method of forming fin-shaped structures includes the following steps. A plurality of spacers is formed on a substrate. The substrate is etched by using the spacers as hard masks to form a plurality of fin-shaped structures in the substrate. A cutting process is then performed to remove parts of the fin-shaped structures and the spacers formed on the removed parts.
Public/Granted literature
- US20140349482A1 METHOD OF FORMING FIN-SHAPED STRUCTURE Public/Granted day:2014-11-27
Information query
IPC分类:
