Method of forming semiconductor device

Invention Grant

US09263294B2 Method of forming semiconductor device 有权

Title translation: 半导体器件形成方法

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Patent Title: Method of forming semiconductor device
Patent Title (中): 半导体器件形成方法
Application No.: US14273283

Application Date: 2014-05-08
Publication No.: US09263294B2

Publication Date: 2016-02-16
Inventor: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Feng-Yi Chang , Chieh-Te Chen , Cheng-Hsing Chuang
Applicant: United Microelectronics Corp.
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/311

Abstract:

A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

Abstract(Chinese):

提供一种形成半导体器件的方法。在基板上依次形成材料层，第一流动材料层和第一掩模层。通过使用第一掩模层作为掩模来进行第一蚀刻工艺，以在材料层中形成第一开口。去除第一掩模层和第一流动材料层。在第一开口中形成填充层。在材料层和填料层上形成第二流动材料层。在第二流动材料层上形成第二掩模层。通过使用第二掩模层作为掩模来进行第二蚀刻处理，以在材料层中形成第二开口。

Public/Granted literature

US20150325453A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2015-11-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）