发明授权
- 专利标题： Semiconductor device and method of manufacture
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13414898申请日： 2012-03-08
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公开(公告)号： US09263337B2公开(公告)日： 2016-02-16
- 发明人: Chun-Li Chou , Shao-Yen Ku , Chi-Yun Tseng , Yu-Yen Hsu , Tsai-Pao Su , Hobin Chen , Sheng-Chi Shih
- 申请人： Chun-Li Chou , Shao-Yen Ku , Chi-Yun Tseng , Yu-Yen Hsu , Tsai-Pao Su , Hobin Chen , Sheng-Chi Shih
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L21/02 ; H01L21/306 ; H01L21/67
摘要：
A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.
公开/授权文献
- US20130109140A1 Semiconductor Device and Method of Manufacture 公开/授权日：2013-05-02
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