Invention Grant
- Patent Title: Transistor with a diffusion barrier
- Patent Title (中): 具有扩散阻挡层的晶体管
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Application No.: US14100760Application Date: 2013-12-09
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Publication No.: US09263522B2Publication Date: 2016-02-16
- Inventor: Bin Yang , Xia Li , PR Chidambaram
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Dieogo
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Dieogo
- Agency: Toler Law Group, PC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/10 ; H01L29/205 ; H01L29/66 ; H01L21/74 ; H01L29/78
Abstract:
An apparatus comprises a substrate. The apparatus also comprises a diffusion barrier formed on a surface of a first region of the substrate. The diffusion barrier is formed using a first material having a first band gap energy. The apparatus further comprises a channel region formed on a surface of the diffusion barrier. The channel region is formed using a second material having a second band gap energy that is lower than the first band gap energy. The apparatus further comprises a back gate contact coupled to the first region of the substrate.
Public/Granted literature
- US20150162405A1 TRANSISTOR WITH A DIFFUSION BARRIER Public/Granted day:2015-06-11
Information query
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