发明授权
- 专利标题： Localized fin width scaling using a hydrogen anneal
- 专利标题（中）： 使用氢退火进行局部翅片宽度缩放
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申请号： US13909602申请日： 2013-06-04
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公开(公告)号： US09263554B2公开(公告)日： 2016-02-16
- 发明人: Veeraraghavan S. Basker , Shogo Mochizuki , Tenko Yamashita , Chun-Chen Yeh
- 申请人： INTERNATiONAL BUSINESS MACHINES CORPORATION , Renesas Electronics Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66 ; H01L29/78
摘要：
Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width and round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins.
公开/授权文献
- US20140353735A1 LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL 公开/授权日：2014-12-04
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