发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13110236申请日： 2011-05-18
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公开(公告)号： US09263589B2公开(公告)日： 2016-02-16
- 发明人: Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
- 申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2010-116952 20100521
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66
摘要：
An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.
公开/授权文献
- US20110284844A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-11-24
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