发明授权
- 专利标题： Oxide transistor with nano-layered structure
- 专利标题（中）： 具有纳米级结构的氧化物晶体管
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申请号： US14020498申请日： 2013-09-06
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公开(公告)号： US09263592B2公开(公告)日： 2016-02-16
- 发明人: Su Jae Lee , Chi-Sun Hwang , Hye Yong Chu , Sang Chul Lim , Jae-Eun Pi , Min Ki Ryu
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 代理机构： Rabin & Berdo, P.C.
- 优先权： KR10-2012-0144276 20121212
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L21/02
摘要：
A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.
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