Invention Grant
- Patent Title: Light emitting diodes for simulation of missile signatures
- Patent Title (中): 用于模拟导弹签名的发光二极管
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Application No.: US13625363Application Date: 2012-09-24
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Publication No.: US09267770B2Publication Date: 2016-02-23
- Inventor: Remigijus Gaska , Alexander Dobrinsky , Maxim Shatalov , Michael Shur
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06G7/48 ; G06G7/56 ; F41J2/00 ; F41J9/08 ; F41H11/02

Abstract:
An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.
Public/Granted literature
- US20140096669A1 Light Emitting Diodes for Simulation of Missile Signatures Public/Granted day:2014-04-10
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