Invention Grant
- Patent Title: Mask and method of forming pattern by using the same
- Patent Title (中): 通过使用其形成图案的掩模和方法
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Application No.: US14591937Application Date: 2015-01-08
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Publication No.: US09268209B2Publication Date: 2016-02-23
- Inventor: Yu-Shiang Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G03F1/38 ; G06F17/50

Abstract:
A method of forming a pattern is disclosed. At first, a layout pattern is provided to a computer system. The layout pattern includes at least a first strip pattern and at least a second strip pattern, and a width of the second strip pattern is substantially larger than a width of the first strip pattern. Subsequently, the second strip pattern neighboring the first strip pattern is defined as a selected pattern. Then, an assist pattern is formed in the selected pattern, and the assist pattern does not overlap a center line of the selected pattern. The layout pattern and the assist pattern are further outputted through the computer system onto a mask.
Public/Granted literature
- US20150128099A1 MASK AND METHOD OF FORMING PATTERN BY USING THE SAME Public/Granted day:2015-05-07
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