Invention Grant
US09268229B2 Composition for forming resist underlayer film, and pattern-forming method
有权
用于形成抗蚀剂下层膜的组合物和图案形成方法
- Patent Title: Composition for forming resist underlayer film, and pattern-forming method
- Patent Title (中): 用于形成抗蚀剂下层膜的组合物和图案形成方法
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Application No.: US13853131Application Date: 2013-03-29
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Publication No.: US09268229B2Publication Date: 2016-02-23
- Inventor: Hiromitsu Tanaka , Junya Suzuki , Masayuki Motonari , Tooru Kimura
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-077942 20120329; JP2013-058928 20130321
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/004 ; G03F7/075 ; H01L21/312

Abstract:
A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.
Public/Granted literature
- US20130256264A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD Public/Granted day:2013-10-03
Information query
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