Invention Grant
- Patent Title: Contact on a heterogeneous semiconductor substrate
- Patent Title (中): 在异质半导体衬底上接触
-
Application No.: US13860845Application Date: 2013-04-11
-
Publication No.: US09269570B2Publication Date: 2016-02-23
- Inventor: Yves Morand , Charles Baudot , Fabrice Nemouchi
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Paris FR Crolles
- Assignee: Commissariat a l'énergie atomique et aux énergies alternatives,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee: Commissariat a l'énergie atomique et aux énergies alternatives,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1253363 20120412
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/285
Abstract:
A method is provided for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.
Public/Granted literature
- US20130273722A1 CONTACT ON A HETEROGENEOUS SEMICONDUCTOR SUBSTRATE Public/Granted day:2013-10-17
Information query
IPC分类:
