发明授权
- 专利标题: Multi-layer barrier layer for interconnect structure
- 专利标题(中): 用于互连结构的多层阻挡层
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申请号: US13554020申请日: 2012-07-20
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公开(公告)号: US09269615B2公开(公告)日: 2016-02-23
- 发明人: Vivian W. Ryan , Xunyuan Zhang , Paul R. Besser
- 申请人: Vivian W. Ryan , Xunyuan Zhang , Paul R. Besser
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/532
摘要:
A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate. An adhesion barrier layer is formed to line the recess. A first stress level is present across a first interface between the adhesion barrier layer and the dielectric layer. A stress-reducing barrier layer is formed over the adhesion barrier layer. The stress-reducing barrier layer reduces the first stress level to provide a second stress level, less than the first stress level, across a second interface between the adhesion barrier layer, the stress-reducing barrier layer, and the dielectric layer. The recess is filled with a fill layer.
公开/授权文献
- US20140024212A1 MULTI-LAYER BARRIER LAYER FOR INTERCONNECT STRUCTURE 公开/授权日:2014-01-23