Invention Grant
US09269771B2 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses
有权
集成电路包括具有松弛压缩应力的有源区域的元件，例如NMOS晶体管
- Patent Title: Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses
- Patent Title (中): 集成电路包括具有松弛压缩应力的有源区域的元件，例如NMOS晶体管
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Application No.: US14627281Application Date: 2015-02-20
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Publication No.: US09269771B2Publication Date: 2016-02-23
- Inventor: Christian Rivero , Guilhem Bouton , Pascal Fornara
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1451616 20140228
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L21/762 ; H01L21/763 ; H01L29/78
Abstract:
An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.
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