Invention Grant
US09269809B2 Methods for forming protection layers on sidewalls of contact etch stop layers
有权
在接触蚀刻停止层的侧壁上形成保护层的方法
- Patent Title: Methods for forming protection layers on sidewalls of contact etch stop layers
- Patent Title (中): 在接触蚀刻停止层的侧壁上形成保护层的方法
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Application No.: US14184826Application Date: 2014-02-20
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Publication No.: US09269809B2Publication Date: 2016-02-23
- Inventor: Kai Frohberg , Marco Lepper , Katrin Reiche
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L29/417 ; H01L23/485 ; H01L21/768
Abstract:
When forming semiconductor devices with contact plugs comprising protection layers formed on sidewalls of etch stop layers to reduce the risk of shorts, the protection layers may be formed by performing a sputter process to remove material from a contact region and redeposit the removed material on the sidewalls of the etch stop layers.
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