发明授权
- 专利标题: CIS-based thin film solar cell
- 专利标题(中): 基于CIS的薄膜太阳能电池
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申请号: US13702458申请日: 2011-06-16
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公开(公告)号: US09269841B2公开(公告)日: 2016-02-23
- 发明人: Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
- 申请人: Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
- 申请人地址: JP Tokyo
- 专利权人: SOLAR FRONTIER K.K.
- 当前专利权人: SOLAR FRONTIER K.K.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2010-138356 20100617
- 国际申请: PCT/JP2011/063797 WO 20110616
- 国际公布: WO2011/158900 WO 20111222
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/0749 ; H01L31/046 ; H01L31/0463 ; H01L31/032
摘要:
A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.
公开/授权文献
- US20130146137A1 CIS-BASED THIN FILM SOLAR CELL 公开/授权日:2013-06-13