Invention Grant
- Patent Title: Light-emitting element
- Patent Title (中): 发光元件
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Application No.: US14504826Application Date: 2014-10-02
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Publication No.: US09269920B2Publication Date: 2016-02-23
- Inventor: Shunpei Yamazaki , Satoshi Seo , Satoko Shitagaki , Nobuharu Ohsawa , Hideko Inoue , Hiroshi Kadoma , Harue Osaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-074272 20110330
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/00 ; H01L51/50 ; H01L27/32 ; H01L51/00
Abstract:
A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including the p-type host, and where the n-type host and the p-type host are able to form an exciplex in the light-emitting layer. The light-emitting element exhibits an extremely high emission efficiency (power efficiency of 74.3 lm/W, external quantum efficiency of 24.5%, energy efficiency of 19.3%) at a low driving voltage (2.6 V) at which luminance of 1200 cd/m2 is attainable.
Public/Granted literature
- US20150021579A1 LIGHT-EMITTING ELEMENT Public/Granted day:2015-01-22
Information query
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